Progress in process development of La0.7Sr0.3MnO3 thin films for uncooled THz bolometers

We present preliminary results of uncooled THz bolometers based on La 0.7 Sr 0.3 MnO 3 thin films on SrTiO3 buffered high resistivity silicon substrates. Fabrication improvements enable to obtain low contact resistance and the impedance measurements show that it is possible to minimize the impedance mismatch with an antenna.

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Physique [physics] Sciences de l'ingénieur [physics]

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Quinten_Progress in process development of La0.7Sr0.3MnO3 thin films for uncooled THz bolometers.pdf (199.47 Ko)

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Laurence Méchin : Connectez-vous pour contacter le contributeur

https://hal.science/hal-04277933

Soumis le : jeudi 21 novembre 2024-19:50:07

Dernière modification le : vendredi 22 novembre 2024-07:16:13

Dates et versions

hal-04277933 , version 1 (21-11-2024)

Identifiants

HAL Id : hal-04277933 , version 1
DOI : 10.1109/IRMMW-THz57677.2023.10299059

Citer

Thomas Quinten, Yoann Lechaux, Victor Pierron, Chantal Gunther, Laurence Méchin, et al.. Progress in process development of La0.7Sr0.3MnO3 thin films for uncooled THz bolometers. 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montreal, Canada. pp.1-2, ⟨10.1109/IRMMW-THz57677.2023.10299059⟩. ⟨hal-04277933⟩

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